Hamamatsu adds to infrared LED range

Hamamatsu Photonics has introduced the L10660 extended infrared LED, which features 2.6 times the radiant output power of the conventional type (L7850).

The L10660 was developed using MBE (Molecular Beam Epitaxy) technology to create LEDs with multiple quantum wells in the active layer.

With this technology, the L10660 is able to produce 2.6mW of radiant flux at 1.45um using the same forward current as the conventional type.

The L10660 is suitable for applications where high stability is required and features a wavelength variation of only +/- 0.05um.

The high stability and long-emission wavelength of the infrared light makes the L10660 suitable for spectrophotometry, as well as foreign matter screening and moisture detection applications.

The LED measures 5.4mm x 3.6mm and is designed for equipment where assembly space is critical.

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