Product category: Discrete Power Devices
News Release from: Future Electronics | Subject: Si4362DY and Si4892DY
Edited by the Electronicstalk Editorial Team on 2 July 2002
MOSFETs go high and
low to boost DC/DC efficiency
A novel pair of MOSFETs manufactured by Vishay to help to make portable devices run cooler, use less power and function longer will be distributed by Future Electronics across Europe
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A novel pair of mosfets manufactured by Vishay to help to make portable devices run cooler, use less power and function longer, will be distributed by Future Electronics across Europe. The new Si4362DY and Si4892DY Little Foot SO-8 Power mosfets are aimed at core-voltage DC/DC convertors. Gurjit Gill, Technical Director, Future Electronics Europe said: "Future is delighted to be launching these new products with Vishay.
Together with previously released products, the new devices complete the Vishay Siliconix family of power mosfets optimised for low- and high-side operation.
Our power and linear technical solutions managers will be available to help customers design the new mosfets into DC/DC convertors.
By designing these in, engineers will see lower power consumption and longer function times for their convertors".
Further reading
Prototyping board proves PoE designs
Future Electronics has released the PowerNet Future-Blox rapid prototyping board
Agilent praises excellent performance
Agilent Semiconductor has awarded pan-European distributor Future Electronics its "Performance Excellence Award" for new sales growth during 2002
With an exceptionally low on-resistance rating of 5.5mohm at a 4.5V gate drive - 15% lower than competing devices - the new Si4362DY is optimised for low-side operation, reducing conduction losses and thus boosting efficiency.
Optimised for high-side operation, the Vishay Siliconix Si4892DY features a very low typical gate charge of 8.7nC, minimising switching losses, and on-resistance of 20mohm at a 4.5V gate drive.
The new low-side Si4362DY also features a gate-drain-to-gate-source charge ratio of 0.6 - 13% better than competing devices - and a very low gate resistance of 1.3ohm, both characteristics that help to prevent "shoot-through" conditions in which the high- and low-side mosfets are on, creating a short from the input voltage to ground.
Improving on its predecessor, the Si4894DY, the new Si4892DY features a lower gate resistance of 1ohm, a 30% better on-resistance times gate charge product of 139.2, and faster turn-on times.
The device's low switching losses and higher speeds combine to provide higher efficiency control.
The Si4362DY's low gate-drain-to-gate-source charge ratio will allow designers to incorporate less-expensive MOSFET drivers into end products, further reducing component costs.
Working together, the two 30V mosfets provide increased efficiency, longer run times, and cooler operation for portable computers and game consoles.
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