News Release from: Fujitsu Microelectronics Europe
Edited by the Electronicstalk Editorial Team on 1 August 2001
Three memories in one stack up mobile savings
Fujitsu has announced the industry's first triple-stacked multichip package (MCP), combining 64Mbit NOR-type Flash memory, 16Mbit mobile FCRAM and 4Mbit SRAM.
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Fujitsu has announced the industry's first triple-stacked multichip package (MCP), combining 64Mbit NOR-type Flash memory and 16Mbit mobile fast-cycle random access memory (FCRAM) with an asynchronous SRAM-type interface, and 4Mbit SRAM. Recent advances in mobile-phone technology have expanded cellular-telephone functions to include capabilities such as web browsing and downloading of Java applets, generating demand for increased memory and higher speeds. The triple-stacked MCP addresses these new demands by packaging together Flash memory for program and data storage, high data-capacity FCRAM as working memory, and SRAM as cache memory for backup storage when downloading data or when the device is in standby mode.
This combination enables efficient memory usage to accommodate greater functionality and data capacity in cellular telephones.
The MCP also achieves a reduction in the amount of power used by the combined memory chips and minimises the number of parts and amount of wiring required by the common x16 configured databuses.
The 85 ball PBGA package measures 10.4 x 10.8 x 1.3mm, slightly slimmer than conventional MCPs.
By combining three chips into one, it uses 30% less board area than previous devices.
The new MB84VR5E3J1A1 offers an address access/program (1 word) time of 85ns max, a standard NOR-type Flash memory access time of 80ns, a mobile FCRAM random read access time of 90ns max and an SRAM read access time of 85ns max.
The MCP operates from a 2.7 to 3.1V supply and offers low power consumption and power-saving facilities.
In standby mode the Flash memory has a maximum consumption of 5uA, the FCRAM 70uA and the SRAM 7uA.
In power-saving mode the FCRAM consumes just 10uA.
The maximum current consumption of the Flash memory in read operation is 18mA at 5MHz.
For the FCRAM it is 20mA at 11MHz and for the SRAM 40mA at 10MHz.
During write/erase operations the NOR-type Flash memory offers a current consumption 40mA and an extended life of 100,000 cycles.
The MB84VR5E3J1A is now available in sample quantities with volume production commencing in September this year.
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Copyright © 2000-2006 Pro-Talk Ltd, UK. Based on news supplied by Fujitsu Microelectronics Europe - Subject: MB84VR5E3J1A1
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