Fairchild introduces P-Channel Mosfet

Fairchild Semiconductor offers designers of smart phones, mobile phones, netbooks, medical and other portable applications a single P-Channel Mosfet that is said to enable higher efficiency levels.

The FDZ197PZ offers an RDS (ON) value of 64 mohm at VGS equal to -4.5V.

This feature increases efficiency and offers a 1mm x 1.5mm footprint, reducing board space requirements.

The company said that the WL-CSP package provides excellent power dissipation and conduction loss characteristics compared to conventional plastic-packaged Mosfets in a similar footprint.

The FDZ197PZ offers robust ESD capability (4kV), protecting the device from stresses caused by ESD events that could potentially disable the application.

This P-Channel Mosfet is fabricated with Fairchild's Powertrench Mosfet process technology, making it possible to achieve lower RDS (ON) and higher load currents in smaller package sizes.

The WL-CSP package features 6um x 300um Pb-free solder balls for the board connection, providing high electrical and thermal resistance values.

It features a low package height of 0.65mm when mounted.

The FDZ197PZ is part of a portfolio of advanced Mosfets and provides a compact, low-profile Mosfet for charging, load switching, DC-DC and boost applications.

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