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Product category: Discrete Power Devices
News Release from: Fairchild Semiconductor | Subject: SMPS II IGBTs
Edited by the Electronicstalk Editorial Team on 09 October 2001
Low gate drive voltage lets IGBTs swap
for MOSFETs
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Fairchild Semiconductor has released its new generation of IGBTs designed to replace 500/600V MOSFETs in switch mode power supply, power factor correction and other high-power applications.
Fairchild Semiconductor has released its new generation of IGBTs designed to replace 500/600V mosfets in switch mode power supply (SMPS), power factor correction (PFC) and other high-power applications - without redesign of the gate drive voltage circuitry The SMPS II IGBT gate drive voltage requirement has been reduced to 8-10V, similar to a mosfet, allowing larger die size power mosfets or multiple mosfets in parallel to be replaced with a single SMPS II IGBT