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Product category: Discrete Power Devices
News Release from: Zetex | Subject: ZXMN2A14F and ZXMN3A14F
Edited by the Electronicstalk Editorial Team on 05 September 2003
MOSFETs boost power dissipation by 60%
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Two new enhancement-mode trench MOSFETs feature half the on-resistance and twice the drain current of previous SOT23-packaged devices.
Halving the on-resistance and doubling the drain current of previous SOT23-packaged mosfets, the latest 20 and 30V N-channel transistors from Zetex take power dissipation performance at an ambient temperature of 25C from 625mW up to 1W Presented in the Zetex SOT23 package, the ZXMN2A14F and ZXMN3A14F enhancement-mode trench mosfets benefit from a 37% reduction in junction to ambient thermal resistance compared with SOT23 predecessors, from 200 to 125C/W