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Product category: Discrete Power Devices
News Release from: Vishay Siliconix | Subject: Si7192DP
Edited by the Electronicstalk Editorial Team on 27 March 2008
MOSFET's merit means lower losses
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N-channel power MOSFET claims record-breaking specifications for on-resistance and figure of merit.
The first device in a new third-generation TrenchFET power MOSFET family offering record-breaking specifications for on-resistance and on-resistance times gate charge has been released by Vishay Intertechnology The new TrenchFET Gen III Si7192DP, an N-channel device in the PowerPAK SO-8 package, features maximum on-resistance of 2.25mohm at a 4.5V gate drive voltage
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