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Product category: Discrete Power Devices
News Release from: Vishay Siliconix | Subject: Si7444DP etc
Edited by the Electronicstalk Editorial Team on 22 April 2005
MOSFETs resist thermal effects
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Siliconix has developed the industry's first N-channel MOSFETs that combine a high 3.4V threshold voltage with on-resistance as low as 2.7mohm.
Siliconix has developed the industry's first N-channel MOSFETs that combine a high 3.4V threshold voltage with on-resistance as low as 2.7mohm The 10 new MOSFETs, available in 40 and 60V versions, are intended for use in high-temperature, high-current applications with inductive loads in the automotive, industrial and fixed telecomms industries, such as high-side switches, motor drives and 12V boardnets