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Product category: Memory Devices and Modules
News Release from: TSMC | Subject: 65nm process for embedded DRAMs
Edited by the Electronicstalk Editorial Team on 08 March 2007
New 65nm process for embedded DRAMs
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A new 65nm embedded DRAM process and IP provide a higher bandwidth, lower power consumption, and a close to 50% smaller cell and macro size than previous high density memory generations
Taiwan Semiconductor has announced a 65nm embedded DRAM process The TSMC foundry achieved 65nm product production in the second quarter last year and has also been producing 90nm embedded DRAM products since the first quarter of 2006
This article was originally published on Electronicstalk on 17 Oct 2005 at 8.00am (UK)