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Product category: Discrete Power Devices
News Release from: Toshiba Electronics Europe | Subject: TPCA8012-H and TPCA8019-H
Edited by the Electronicstalk Editorial Team on 18 January 2008
MOSFETs boost DC/DC convertor efficiency
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High-speed switching MOSFETs provide higher drain current and lower on-state resistance, combined with the power efficiency advantages of the UMOS V-H Series.
Toshiba Electronics Europe (TEE) has added two new devices to its UMOS V-H Series high-speed switching MOSFETs to provide higher drain current (ID), and lower on-state resistance, combined with the power efficiency advantages of the other members of the product family Developed by Toshiba, the TPCA8012-H and TPCA8019-H N-channel MOSFETs extend the UMOS V-H Series with higher drain currents of 40 and 45A (maximum) and lower on-resistances of 4.9 and 3.1mohm, respectively (maximum value at VGS = 10V)