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Product category: Memory Devices and Modules
News Release from: Toshiba Electronics Europe
Edited by the Electronicstalk Editorial Team on 21 December 2007
Tunnel layer to boost future Flash
densities
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Elemental technology opens the way for memory devices with densities of over 100Gbit in the 10nm generation, which lies four generations ahead.
Toshiba has developed a new double tunnelling layer technology applicable to future 10nm generation Flash memories This elemental technology opens the way for memory devices with densities of over 100Gbit in the 10nm generation, which lies four generations ahead