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Product category: Memory Devices and Modules
News Release from: Toshiba Electronics Europe
Edited by the Electronicstalk Editorial Team on 19 April 2007
Microscopy technique clears up 45nm
imaging
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Toshiba is claiming a breakthrough in imaging electron-carrier paths and impurities in semiconductors that allows analysis at the 1nm level for the first time.
Toshiba is claiming a breakthrough in imaging electron-carrier paths and impurities in semiconductors that allows analysis at the 1nm level for the first time This major advance, based on scanning spreading resistance microscopy (SSRM) is an essential step toward achieving LSI at the 45nm generation and beyond