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News Release from: Toshiba Electronics Europe
Subject: 4.5kV trench module
Edited by the Electronicstalk Editorial Team on 13 June 2005

Trench-based module boasts boosted currents

Toshiba Electronics Europe has announced its first trench gate based 4.5kV press pack IEGT (injection enhancement gate transistor).

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Toshiba Electronics Europe has announced its first trench gate based 4.5kV press pack IEGT (injection enhancement gate transistor). The new PPI module will significantly improve the performance and efficiency of high power applications including high-end motor drives, transportation systems and power distribution schemes. Until now, Toshiba's 4.5kV PPI modules have used conventional planar semiconductor technologies.

Moving to a trench gate semiconductor process delivers a reduction in saturation voltage of between 0.6 and 0.7V and an increase in current handling capability when compared with the conventional planar solution.

The result is a module that provides efficiency and performance improvements without any switching loss sacrifice or increase in module size.

In tests at 2100A, the saturation voltage of the new PPI module ranges from 2.3 to 2.8V depending on turnoff conditions.

Under the same test conditions the conventional planar-based module operates with saturation voltages ranging from 2.9 to 3.4V.

Tests have also shown that the increase in current handling capability when compared with previous planar PPIs is in the region of 20%.

The new 4.5kV trench module combines multiple trench-based IEGT chips in a press pack module with a contact diameter of 125mm.

No wire bonds or solder contacts are used in the PPI module, leading to high levels of resilience to thermal cycling.

In addition, thermal management is simplified by the fact that the press pack packaging allows for cooling on both sides of the module.

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