Product category: Discrete Power Devices
News Release from: Toshiba Electronics Europe | Subject: TK15A60S
Edited by the Electronicstalk Editorial Team on 28 March 2005
Novel MOSFET cuts on-resistance and gate charge
A new power MOSFET employs a novel super junction structure that enables a reduction in power consumption caused by on-state resistance to around 40% of the value typical for conventional MOSFETs.
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Toshiba has developed a novel type of power MOSFET called DTMOS. DTMOS employs a new super junction structure that enables a reduction in power consumption caused by on-state resistance to approximately 40% of the value typically achieved with conventional MOSFETs. Developed by Toshiba, the first device in the DTMOS family, TK15A60S, is targeted for use in power supplies in television sets, home appliances, AC adapters and ballast lighting.
Toshiba has began shipping samples of the new MOSFET, and will begin production in April 2005.
The super junction structure, which has vertical paths to allow electrical current to flow through easily on a silicon substrate, realises lower on-resistance than the theoretical limit of silicon.
By applying this super junction structure and optimising the total device, the on-resistance for the same area in Toshiba's DTMOS device achieves a 60% reduction and its gate charge achieves a 40% reduction compared with Toshiba's conventional MOSFETs.
Consequently, the figure of merit (product of on-resistance and gate charge), a characteristic that is one important performance index for MOSFETs (in which smaller is better), is one quarter the value of the company's conventional MOSFETs.
With this announcement, Toshiba is combining a super junction structure with the company's original deep trench MOSFET (DTMOS) technology.
Indeed, the company is the first in the market to use super junction structure combined with deep trench technology.
The TK15A60S features maximum ratings of 15A and 600V with on resistance of 0.3ohm and will begin sampling in March 2005.
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