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Product category: Memory Devices and Modules
News Release from: Toshiba Electronics Europe
Edited by the Electronicstalk Editorial Team on 22 December 2004
New method overcomes CMOS thermal
instability
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Toshiba has developed a new method for suppressing thermal instability and current leakage in MOS transistors that supports advanced CMOS fabrication at 45nm gate lengths and beyond.
Toshiba has developed a new method for suppressing thermal instability and current leakage in MOS transistors that supports advanced CMOS fabrication at 45nm gate lengths and beyond The new technology will contribute to the continued application of CMOS technology to future generations of LSI