Product category: Memory Devices and Modules
News Release from: Toshiba Electronics Europe
Edited by the Electronicstalk Editorial Team on 21 December 2004

Magnetoresistive RAM structure refined

At last week's IEDM Toshiba and NEC revealed two key advancements toward development of a magnetoresistive random access memory.

Toshiba and NEC have revealed two key advancements toward development of a magnetoresistive random access memory, a technology seen as key to the development of future generations of high performance mobile equipment Unveiling the latest fruits of a joint development programme dating back to 2002, the two companies announced a new cell design that halves power consumption during data writes and cuts writing errors, and a novel MRAM architecture with high speed characteristics and a performance that will support development of high-density devices