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Product category: Discrete Power Devices
News Release from: Toshiba Electronics Europe | Subject: MG600JXH1US53
Edited by the Electronicstalk Editorial Team on 02 June 2004
IEGT module aims for GTO replacement
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Toshiba has combined multiple IEGT chips, the latest fast recovery diode technology and an advanced standard package design, to create a compact high-efficiency high-isolation 6.5kV, 600A IEGT module.
Toshiba has combined multiple IEGT (injection enhancement gate transistor) chips, the latest fast recovery diode technology, and an advanced standard package design, to create a compact, high-efficiency and high-isolation 6.5kV, 600A IEGT module The MG600JXH1US53 IEGT module will be ideal for traction control and industrial drives operating under 3kV DC or 4.2kV AC line voltage