Product category: Discrete Power Devices
News Release from: Toshiba Electronics Europe | Subject: 3.3kV IEGT modules
Edited by the Electronicstalk Editorial Team on 1 June 2004
Trench technology reduces
transistor module losses
Toshiba has expanded its family of IEGT (injection enhancement gate transistor) products with the industry's first 3.3kV, 1.2kA module to use trench gate semiconductor technology
The result is a compact standard module that offers overall efficiency improvements of at least 16% over previous products without sacrificing either turn-off or short-circuit capability. Until now, Toshiba's 3.3kV IEGT modules have used conventional planar semiconductor technologies. By moving to a trench-based semiconductor process, the new module offers reductions in turn-on and turn-off losses of 10 and 40%, respectively, when compared with previous products.
This article was originally published on Electronicstalk on 1 June 2004 at 8.00am (UK)
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The new module, which incorporates improved free-wheeling diodes (FWDs) that are closely matched to the IEGT characteristics, also offers a 40% reduction in reverse recovery losses compared with conventional FWDs.
The 3.3kV modules are ideally suited to industrial, traction control, power transmission and other applications where reducing losses is a key design criteria.
Each module comprises 24 IEGT chips and 12 diode chips in a package with dimensions of 140 x 190 x 38mm.
aluminium silicon carbide (AlSiC) is used as a baseplate, and aluminium nitride (AlN) ceramic provides the isolation substrate.
The closely matched coefficient of thermal expansion (CTE) between these two materials ensures enhanced reliability under thermal and power cycling conditions.
Toshiba's latest IEGT semiconductors achieve lower saturation voltages than planar alternatives as a result of the higher injection enhancement effect in the trench gate structure.
A punch-through structure combined with the IEGT technology has been employed to ensure a good trade-off between saturation voltage and the switching loss.
A local lifetime control technique has also been used to reduce the switching loss for high-frequency applications.
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