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Product category: Discrete Power Devices
News Release from: Toshiba Electronics Europe | Subject: 1200V IEGTs
Edited by the Electronicstalk Editorial Team on 28 May 2003
IEGTs promise low thermal resistance
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Toshiba has combined trench gate semiconductor structure with ultra thin wafer technology to produce a new generation of ultra-efficient high-performance 1200V injection enhancement gate transistors.
Toshiba has combined trench gate semiconductor structure with ultra thin wafer technology to produce a new generation of ultra-efficient high-performance 1200V IEGTs (injection enhancement gate transistors) As well as providing reduced on-state voltages and losses compared with previous devices, the new IEGTs also have profiles that are up to 25% lower