Product category: Memory Devices and Modules
News Release from: Toshiba Electronics Europe | Subject: TC58DVG14B1FT00 and TH58DVG24B1FT00
Edited by the Electronicstalk Editorial Team on 18 March 2003
Bigger Flash devices
promise monster card density
Toshiba has doubled the capacity of its largest single-die NAND Flash memory lineup with the release of a 2Gbit device
The company has also developed a 4Gbit device that stacks two of the 2Gbit NAND Flash dice in a single package. The new memories will greatly increase the capacity of Flash memory cards, making them capable of supporting a wider range of applications. Samples of the TC58DVG14B1FT00 2Gbit NAND Flash memory are available now and samples of the TH58DVG24B1FT00 4Gbit device will be available next month.
This article was originally published on Electronicstalk on 18 March 2003 at 8.00am (UK)
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Mass production will start in June 2003 at a monthly capacity of 300,000 units for each IC.
The 2Gbit NAND Flash memory was developed by Toshiba and SanDisk, under their 1999 comprehensive agreement on joint development of NAND Flash memory.
The new chips will be produced with advanced 0.13-micron process technology at the Flash Vision Japan, the joint venture between Toshiba and SanDisk located in Yokkaichi, Japan.
NAND Flash memory ICs offer high-density nonvolatile data retention, and are widely employed in Flash memory cards and as embedded memory in a digital consumer products such as digital still cameras, PDAs and mobile phones.
With the introduction of new devices, Toshiba's NAND Flash memory component lineup will range from 64Mbit to 4Gbit devices, and further leverage the company's leadership in the NAND Flash market.
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