Product category: Communications ICs (Wireless)
News Release from: Toshiba Electronics Europe | Subject: TC35654
Edited by the Electronicstalk Editorial Team on 17 September 2002
CMOS RF section
enables single-chip Bluetooth
The TC35654 Bluetooth LSI integrates RF and baseband circuits on a single chip that fully conforms to the Bluetooth ver.1.1 specification
Toshiba achieved the single-chip solution by using CMOS process technology for the RF circuit rather than the usual bipolar process technology. Applying the same process technology to both circuits achieves an LSI that requires fewer external components and that can be housed in a 7 x 7mm plastic fine-pitch land grid array (PFLGA) package only 0.8mm high.
This article was originally published on Electronicstalk on 17 September 2002 at 8.00am (UK)
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The single-chip solution takes up approximately 40% less space on a printed circuit board than separate RF and baseband circuit ICs.
Toshiba will reinforce its leading role in Bluetooth development and promotion by bringing the new IC to system-on-chip solutions for Bluetooth IP-embedded application specific ICs in the future.
Samples of the new LSI will be available in October 2002 at Y600.
Mass production is slated for March 2003 at an initial 50,000-units a month, a figure that is expected rise to 500,000 units a month by the end of 2003.
Toshiba will also meet market demand by introducing samples of a Bluetooth RF IC based on SiGe Bi-CMOS technology in October 2002.
The new LSI adopts Bluetooth core circuit technology licensed from Nokia, the world leader in cellular phones, assuring highly reliable interoperability between multiple Bluetooth-enabled platforms.
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