Product category: Discrete Power Devices
News Release from: Toshiba Electronics Europe | Subject: TPCS8204 dual-MOSFET
Edited by the Electronicstalk Editorial Team on 13 April 2001
Dual power MOSFET switches 25% faster
A semiconductor process that enables a threefold increase in cell density compared with previous technologies is behind a new generation of space-saving power MOSFETs from Toshiba.
A semiconductor process that enables a threefold increase in cell density compared with previous technologies is behind a new generation of space-saving power mosfets that combine significantly reduced on-resistance (RDS (ON)) with a 25% improvement in switching performance Designed for modern, low voltage applications such as DC/DC convertors for portable, battery-powered devices, the TPCS8204 is a dual-mosfet switch supplied in a TSSOP-8 package
This article was originally published on Electronicstalk on 8 Nov 2004 at 8.00am (UK)
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The device features a typical RDS(ON) down to just 13mohm (with a driving voltage of 4.0V) and a breakdown voltage rated at 20V.
A minimum threshold voltage (Vth) of 0.5V is designed to enable reliable operation at gate-source voltages as low as 2V.
The new TPCS8204 dual-mosfet is able to offer performance and size improvements by utilising Toshiba's third generation trench cell semiconductor process known as UMOS III.
This process features a design rule of 100Mcells/inch2, which is three times the density of the previous generation.
UMOS III has allowed Toshiba to optimise gate, drain and source dimensions to reduce gate charge (Qg) and RDS(ON).
This leads to a 25% improvement in switching performance as described by the equation Qg x RDS(ON).
The TPCS8204 is the first device to be built using the UMOS III process.
The TPCS8204 dual mosfet device can satisfy high side and low side roles in power conversion equipment including DC/DC convertors and lithium-ion battery packs.
Its low drive characteristics address low voltage applications such as notebook PCs and other portable instruments where switching performance is critical for high-speed operation and low average power consumption.
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