Product category: Power Supply ICs and Controllers
News Release from: Texas Instruments (April 2001-March 2006) | Subject: TPS2490 and TPS2491
Edited by the Electronicstalk Editorial Team on 8 January 2004
Hot-swap managers provide MOSFET protection
The TPS2490 and TPS2491 are the industry's first hot swap power managers featuring programmable power and current limit functions for positive 9 to 80V systems
Simplifying high voltage system design, the new 10-pin, 3 x 5mm controllers take advantage of TI's new 0.7um silicon-on-insulator analogue process to ensure complete mosfet safe operating area (SOA) protection. The TPS2490 and TPS2491 hot swap managers are ideally suited to support and protect emerging positive high voltage distributed power systems, such as 12, 24 and 48V server backplanes, storage area networks, medical systems, plug-in modules and wireless basestations.
This article was originally published on Electronicstalk on 8 January 2004 at 8.00am (UK)
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'One of the major concerns for power designers of positive high-voltage power systems is maximising voltage operation while achieving low channel resistance', said Rich Valley, Vice President of TI's system power management business.
'These new flexible hot swap devices give designers peace of mind by following the power curve and guaranteeing the FET is safe, no matter how harsh the operating conditions'.
The TPS2490 and TPS2491 devices' programmable power limiting feature helps make certain the external FET never operates outside its SOA in applied voltage, current and time.
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During normal operation, the external FET works with the gate-to-source voltage maximised to provide the lowest possible channel resistance.
During startup and short-circuit events, the gate-to-source voltage is modulated to provide a defined turn-on time and to prevent damage to the external FET.
A timer function limits how long the device will be in power-limit mode.
The power-limit circuitry, which monitors the drain current and drain-to-source voltage of the external FET, computes the power dissipation and controls the gate-to-source voltage to prevent the FET from dissipating power greater than the user-programmed level.
When the drain-to-source voltage of the external FET is low, the circuitry operates in a current-limit mode, preventing the drain current from surpassing the user-programmed level.
TI's new 0.7um LBC-SOI thick copper process focuses state-of-the-art manufacturing technology on the future needs of high voltage power systems and high performance analogue.
The 110V analogue process significantly eases the design process through advanced trench isolation techniques.
The LBC-SOI process allows TI to achieve several competitive advantages, including higher packing density, smaller parasitic capacitances, inherent latch-up immunity and the ability to eliminate substrate currents.
The TPS2490 and TPS2491 are shipping in volume today in lead-free, 10-pin MSOP packages, and are priced at $1.70 per 1000 units.
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