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Product category: Discrete Power Devices
News Release from: STMicroelectronics | Subject: STW55NM60ND
Edited by the Electronicstalk Editorial Team on 07 May 2008
Fast-recovery MOSFETs slash
on-resistance
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A 600V N-channel MOSFET claims the industry's best on-resistance of 60mohm for fast-recovery MOSFETs in the standard TO-247 package.
STMicroelectronics has developed a new family of fast-recovery MOSFETs that combine enhanced switching performance with on-resistance improved by more than 18% over existing devices, to meet the needs of efficiency-focused applications, including renewable-energy controllers The first device in the new Super-Junction FDmesh II family is the STW55NM60ND, a 600V N-channel MOSFET claiming the industry's best on-resistance of 60mohm for fast-recovery MOSFETs in the standard TO-247 package