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Product category: Discrete Power Devices
News Release from: STMicroelectronics | Subject: STD60N3LH5 and STD85N3LH5
Edited by the Electronicstalk Editorial Team on 21 February 2008
MOSFETs cut on-resistance and gate
charge
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STripFET technology makes use of very high equivalent cell density and smaller cell features to achieve extremely low on-resistance and losses, while using less silicon area.
Two new power MOSFETs from STMicroelectronics are intended for the most demanding DC/DC convertor applications The new devices use the latest version of ST's proprietary STripFET technology to deliver extremely low conduction and switching losses, up to 3W lower in a typical voltage regulator module, and to achieve the lowest figure of merit among competing devices