Product category: Memory Devices and Modules
News Release from: Spansion | Subject: MirrorBit ORNAND2
Edited by the Electronicstalk Editorial Team on 16 November 2007
Next-generation ORNAND targets NAND
applications
MirrorBit ORNAND2 architecture will use a SONOS-like memory cell connected in a NAND memory array at 45nm, featuring fast write performance with high packing density.
Spansion has announced plans for the next generation of its successful data storage product family, the MirrorBit ORNAND architecture Leveraging Spansion's proprietary charge trapping storage technology, the new MirrorBit ORNAND2 architecture will use a SONOS-like memory cell connected in a NAND memory array at 45nm, featuring fast write performance with high packing density - delivering the performance and cost advantages of NAND technology with the compelling cost structure of 300mm wafers
This article was originally published on Electronicstalk on 4 Jun 2008 at 8.00am (UK)