IR introduces improved 25V and 30V Mosfets

International Rectifier has launched a series of 25V and 30V N-channel trench Hexfet power Mosfets, featuring enhanced switching performance for synchronous buck converter and battery protection.

The family of Mosfets uses IR's silicon technology to deliver on-state resistance [RDS(on)] and improved switching performance.

The devices' low conduction losses improve full-load efficiency and thermal performance, while low switching losses help to achieve high efficiency, even at light loads.

The Mosfets are also offered in a Power QFN package, to provide improved power density when compared with an SO-8 package, while keeping the same pin-out configuration.

Depending on application, the dual SO-8 Mosfets allow a two-for-one exchange to reduce component count.

Single and dual N-channel Mosfets are available.

Single devices are offered in a PQFN 5 x 6mm and 3 x 3mm package, optimised for high-volume production in addition to D-Pak, I-Pak and SO-8 packages, while dual devices are offered in an SO-8 package.

The devices are RoHS-compliant and can be offered halogen-free.

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