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Product category: Discrete Power Devices
News Release from: NXP Semiconductors | Subject: BFU725F
Edited by the Electronicstalk Editorial Team on 07 November 2007
Silicon transistor edges into GaAs
applications
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Microwave NPN transistor combines high switching frequency, high gain and very low noise to make it an ideal solution for a variety of RF applications.
New from NXP Semiconductors, the BFU725F microwave NPN transistor features an impressive blend of high switching frequency, high gain and very low noise that make it an ideal solution for a variety of RF applications The ultralow noise figure improves the reception of the sensitive RF receivers found in various wireless devices, such as GPS systems, DECT phones, satellite radio, WLAN/CDMA applications, and the high cutoff frequency is ideally suited to meet the needs of applications that operate in the 10 to 30GHz range, such as satellite low-noise blocks