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Product category: Discrete Power Devices
News Release from: NXP (formerly Philips Semiconductors) | Subject: mTrenchMOS TSOP6 devices
Edited by the Electronicstalk Editorial Team on 29 October 2002

Shrinking MOSFETs cut
on-resistance and power

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Philips has a new line of N-channel MOSFETs in TSOP6 packages based on its innovative mTrenchMOS technology

Philips has a new line of N-channel mosfets in TSOP6 packages based on its innovative mTrenchMOS technology. With a footprint of 9.3mm2, or smaller than the tip of a match, the mTrenchMOS TSOP6 devices enable the creation of smaller, lighter, and more powerful portable products such as PDAs, notebook PCs, and domestic appliances such as electric shavers and toothbrushes.

The new mTrenchMOS TSOP6 devices feature very low on-resistance, and are rated at 30, 20 and 12V drain-source voltage.

The lower a mosfet's on-resistance, the less power is dissipated by the product, thus increasing battery life.

The TSOP6 offers superior thermal and electrical qualities providing benefits such as decreased levels of power dissipation down to 1.4W in addition to cooler running temperatures.

"As high-performance mobile devices like phones, laptops and PDAs pack in more functionality and processing power, space for key components becomes more confined, leading designers to look for smaller silicon solutions that offer improved power capabilities and comparable performance standards", said Ian Moulding, International Product Marketing Manager for Power, Philips Semiconductors.

"The introduction of the mTrenchMOS portfolio marries Philips' established mTrenchMOS technology with its expertise in small package manufacturing and offers designers a simple solution to their power and design requirements".

mTrenchMOS products can be dropped into a range of applications as replacements for larger existing packages or in completely new designs.

Samples of the TSOP6 are available now.

Further mTrenchMOS product releases in TSSOP8, SC70 and SC88 will follow in Q4 2002.

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