News Release from: PolarFab
Edited by the Electronicstalk Editorial Team on 2 February 2004
Power process gains 7V CMOS options
PolarFab has qualified two new CMOS devices for production on its 8in PBC4 0.5-micron BiCMOS-DMOS process that allow designers to meet specifications requiring a 7V absolute rating.
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PolarFab has qualified two new CMOS devices for production on its 8in PBC4 0.5-micron BiCMOS-DMOS (BCD) process that allow designers to meet specifications requiring a 7V absolute rating. The new NMOSTUBEL and PMOSTUBEL also help reduce a device's overall size, as designers no longer need to employ a 16V device to accommodate transients that may cause a device's voltage to spike out of range. The PBC4 process with the newly qualified CMOS NMOSTUBEL and PMOSTUBEL is ideal for manufacturing ICs for high voltage power management and smart-power applications, including motor control, gate drivers, and microprocessor supervisory circuits.
The newly qualified devices offer several performance improvements.
The fully isolated (doubled tubbed) NMOSTUBEL provides increased layout packing density, independent of the driver, contributing to the smaller device footprint.
At 7V operation (maximum Vgs), the device has a specific on-resistance (Rsp) of 14mohm-mm2, a drive current (Id) per unit area of 81A/mm2, and threshold voltage specification window of 0.35V for large aspect ratio devices.
The PMOSTUBEL features an Rsp of 51mohm-mm2, an Id of 38A/mm2, and a threshold voltage specification window of 0.39V at 7V operation (maximum Vgs) for large aspect ratio devices.
Both devices have a thick gate oxide (400A) for good snapback, hot-carrier degradation and oxide reliability performance.
They also have a maximum steady state operating voltage (Vds) of 7.5V across both gate and drain.
The PBC4 process is supported with a complete set of design tools, including a process design kit (PDK), models, and a comprehensive design and layout manual.
Pricing and delivery is dependant on customer requirements.
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