Product category: Stand-Alone Instruments
News Release from: Ophir RF | Subject: High-power GaAs FET amplifiers
Edited by the Electronicstalk Editorial Team on 18 February 2002
High-power GaAs FET amplifiers
run up to 3GHz
Ophir RF has a new family of high-power amplifiers covering the frequency range 0.7-3.0GHz
These small, lightweight solid-state amplifiers are available with output powers of 10, 30, 50, 100 and 200W. This frequency range covers GSM, PCS, DCS and the emerging 3G bands, making the amplifiers suitable for RF device testing and for PIM testing. GaAsFET technology means that the usable linear power is typically only 0.75dB below the saturated output power level.
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RF amplifiers provide powerful coverage
Two new RF power amplifiers together cover the entire 20-2000MHz frequency range at greater than 50W RF output power
Amplifier module offers remote control option
Designed primarily for 802.11b transmission in the 2.4GHz unlicensed ISM band, the Model 5302054 is a small, lightweight, highly linear amplifier module with a minimum small signal gain of 38dB
For instance, 200W of saturated output power would typically equate to more than 170W of usable power.
This makes the high power versions highly suited to the replacement of 1-2.5GHz TWTAs (travelling-wave-tube amplifiers), as the superior linearity means 3 to 5dB less back off from saturation when compared with a TWTA.
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