Product category: Discrete Power Devices
News Release from: ON Semiconductor | Subject: Low-on-resistance MOSFETs
Edited by the Electronicstalk Editorial Team on 28 March 2003
Trench process slashes
MOSFET on resistance
ON Semiconductor has developed a novel trench process technology that it claims on average delivers a 40% improvement in on-resistance when compared with other trench processes on the market today
Before the end of the year, the company plans to introduce a complete portfolio of P-channel and N-channel mosfets that are based on this innovative trench technology. Focus applications of the initial devices - to be launched this quarter - will be load management, circuit charging, battery protection and DC/DC conversion in portable and wireless products.
This article was originally published on Electronicstalk on 28 March 2003 at 8.00am (UK)
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High-performance trench-based devices for computing and automotive applications will follow.
"An improved cell geometry combined with ON Semiconductor's trench technology is a union that delivers best-in-class on-resistance characteristics - translating directly into extended battery life, higher power-conversion characteristics and higher thermal efficiencies", said Ramesh Ramchandani, ON Semiconductor Vice President and General Manager of Integrated Power Products.
"The market currently offers a broad selection of trench-based mosfets but ON Semiconductor is entering the market with superior devices based on a state-of-the-art process technology".
ON Semiconductor's unique trench technology realises the highest channel density in the industry, delivering the best-in-class on-resistance performance for a given package footprint.
For example, the 8 and 20V P-channel products to be offered by ON Semiconductor in ChipFET packages (1.8 x 3.3mm) demonstrate on-resistances of 19 and 21mohms, respectively.
On average, these values at a gate voltage of 4.5V reflect a 40% improvement compared with currently available products in packages with the same footprint.
This same proportional improvement in on-resistance is also expected in Micro-8LL (3.3 x 3.3mm), TSOP-6 (3 x 3mm) and SC-88 (2.0 x 2.0mm) packaged mosfets.
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