Product category: Power Supply ICs and Controllers
News Release from: National Semiconductor | Subject: LM5111 and LM5112
Edited by the Electronicstalk Editorial Team on 05 October 2004
Gate drivers promise peak performance
Two new gate drivers offer flexible solutions in some of the industry's smallest packages, making them ideal for driving large power MOSFETs in power supplies, motor drives and industrial control.
The dual-channel LM5111 and single-channel LM5112 are gate drivers that offer flexible solutions in some of the industry's smallest packages, making them ideal for driving large power MOSFETs used in AC/DC and DC/DC convertors, motor drives and industrial control systems The LM5112, available in a tiny 3 x 3mm LLP-6 package, also enables the design of high-performance DC/DC convertors when used as part of a chipset with National's LM5000 family of pulsewidth modulation (PWM) controllers and LM510x half-bridge drivers
This article was originally published on Electronicstalk on 5 Jan 2001 at 8.00am (UK)
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"With the introduction of the LM5111 and LM5112, National continues to provide industry-leading power components in tiny, thermally enhanced packages that arm designers with the flexibility necessary to optimise today's highly compact and efficient power convertors", said Paul Greenland, Marketing Director for National Semiconductor's Power Management Group.
"The LM5112, for example, provides a whopping 7A peak gate drive, yet is packaged in the industry's smallest thermally enhanced package".
"As part of a chipset, it may be used with any of National's PWM controllers to form a complete, high-speed, primary- or secondary-side power solution".
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The LM5112 operates at high speeds with minimal delay and high peak output currents.
Designed using National's high-voltage analogue-BiCMOS-DMOS (ABCD) technology, the LM5112's compound output driver stage includes MOS and bipolar transistors operating in parallel.
This combination can sink more than 7A peak current from capacitive loads, driving large power MOSFETs at frequencies up to 1MHz.
A major benefit of the unique compound drive stage is that it offers users more reliable operation by reducing drive current variations during supply voltage and temperature changes.
The LM5112 also provides separate ground and reference pins for the input and output stages to support split-supply gate drive configurations.
Because its dual-logic interface accepts either inverting or noninverting signals, the LM5112 is flexible enough to interface with most power controllers and microprocessors on the market today.
The LM5111 offers two full 5A peak drivers in a SOIC-8 package that can directly replace many older CMOS gate drive solutions, while offering an improved peak output current of 5A rather than 2A, as well as higher-efficiency operation.
The dual-channel LM5111 deploys the same advanced compound driver technology as the single-channel LM5112.
The LM5111 also allows the normally separate 5A peak drive channels to be tied in parallel with their inputs and outputs connected, doubling the output drive current capacity to 10A peak for driving extremely large power MOSFETs very efficiently at high speeds up to 1MHz.
It is available in three different input signal options: the two channels can be noninverting, inverting or a combination of the two.
Available today, the LM5111 is priced at $0.65 and the LM5112 is priced at $0.55 each in 1000-off volumes.
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