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MoSys has licensed its 1T-SRAM embedded memory technology to Vimicro for use in next-generation multimedia processors for cellular phones. "A significant consideration in cell phone design is the need for low power and enhanced multimedia processing capabilities and we believe that we can meet these new challenges by adopting MoSys' 1T-SRAM memory", said Jun Zhu, VP of Engineering of Vimicro. "MoSys offers high-performance embedded memory technology utilizing less power and space, thus providing an enhanced product at a lower cost staying ahead of industry standards".
MoSys' 1T-SRAM technologies have already been silicon-proven in six process generations and are in high-volume production in many consumer and communications products.
"We are pleased to work with Vimicro to extend the use of our 1T-SRAM technology", said Mark-Eric Jones, Vice President and General Manager of Intellectual Property at MoSys.
"By choosing our 1T-SRAM embedded memory, Vimicro will take advantage of the industry's highest quality embedded memory solution".
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