News Release from: MoSys
Edited by the Electronicstalk Editorial Team on 22 January 2004
Sanyo is sold on 1T-SRAM
MoSys has licensed its 1T-SRAM embedded memory technology to Sanyo Electric for use in its consumer product SoC designs.
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MoSys has licensed its 1T-SRAM embedded memory technology to Sanyo Electric for use in its consumer product SoC designs. "With today's requirements for larger embedded memories, together with the needs of increased speed and lower power, SoC designers are demanding radically new embedded memory technology. We believe that we can meet these new challenges by adopting MoSys' 1T-SRAM memory", said Toshio Suganuma, Senior Manager of Sanyo Electric Co, Semiconductor Company LSI Business Unit Design Engineering Department 2.
"Sanyo has evaluated MoSys' 1T-SRAM embedded memory technology and selected MoSys for its performance, density and power capabilities not available from other embedded memory technologies.
By using MoSys' 1T-SRAM embedded memory, our customers will benefit from SoC die area savings".
MoSys' 1T-SRAM technologies have already been silicon-proven in six process generations and are in high-volume production in many consumer and communications products.
"We are pleased to work with Sanyo to extend the use of our 1T-SRAM technology", said Mark-Eric Jones, Vice President and General Manager of intellectual property at MoSys.
"By choosing our 1T-SRAM embedded memory, Sanyo and its customers will take advantage of the industry's highest quality embedded memory solution".
Through its partnership with MoSys, Sanyo joins a growing list of leading semiconductor companies that have aligned with MoSys to develop high-quality integrated circuits at a competitive price.
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