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Product category: Memory Devices and Modules
News Release from: MoSys | Subject: 1T-SRAM-Q technology
Edited by the Electronicstalk Editorial Team on 24 July 2003
Quad-density memory shrinks to nanometre
processes
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MoSys is to port its innovative quad-density 1T-SRAM-Q technology to UMC's 130 and 90nm logic processes.
MoSys is to port its innovative quad-density 1T-SRAM-Q technology to UMC's 130 and 90nm logic processes This extends the existing co-operation between the companies to offer additional optimised high-density memory solutions to UMC's foundry customers, which already include the 130nm silicon proven 1T-SRAM-R