News Release from: MoSys
Edited by the Electronicstalk Editorial Team on 16 August 2002

Mosys ranked first in net margin

MoSys ranked first overall in net margins when compared with 87 other semiconductor companies, according to Semiconductor Times (August 2002 issue).

Note: Readers of the Editor’s free email newsletter will have read this news when it was announced. . It’s free!

MoSys ranked first overall in net margins when compared with 87 other semiconductor companies, according to Semiconductor Times (August 2002 issue). The Semiconductor Times rankings are based on reported earnings for 2Q 2002, 1Q 2002 and 2Q 2001. Cliff Hirsch, Publisher of Semiconductor Times, stated, "I strive to provide reliable, inside, advance information on emerging semiconductor companies and technologies.

We carefully track net margin and gross margin as leading indicators for up and coming semiconductor companies.

Net margin of 42% and gross margin of 89%, coupled with 21% sales growth is truly impressive in these trying times".

"These results reflect the incredible value our customers see in MoSys' technology", stated Dr Fu-Chieh Hsu, CEO of MoSys.

"Despite the semiconductor and economic slowdown, MoSys continues to be successful in building stronger relationships with our clients and in managing new business initiatives.

Our outstanding ranking with Semiconductor Times reflects these efforts.

We are pleased with the recognition we have received from our clients and the industry".

MoSys' licensees cover a wide range of applications in the communications and consumer electronics markets.

The company's patented, volume production proven, semiconductor memory technology, 1T-SRAM, provides significant advantages over traditional SRAM in density, power consumption and cost that enable designers to more economically use a larger amount of memory.

This combination of high density, low power consumption, high speed and low cost is unmatched by other available memory technologies.

MoSys' memory technologies are available in 1T-SRAM-R (reliability) and 1T-SRAM-M (mobile).

MoSys: contact details and other news
Other news in Intellectual Property Cores
Email this news to a colleague

RSS news feed for MoSys
RSS news feed for Intellectual Property Cores
Electronicstalk Home Page

 
Advertisers! Download our free 2006 media pack now