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Product category: Memory Devices and Modules
News Release from: MoSys | Subject: 1T-SRAM at TSMC
Edited by the Electronicstalk Editorial Team on 15 November 2001
1T-SRAM ready to roll on 0.13-micron
processes
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MoSys' 1T-SRAM technology has now been verified on multiple versions of TSMC's 0.13-micron standard and triple-oxide logic processes with excellent yield results.
MoSys' 1T-SRAM technology has now been verified on multiple versions of TSMC's 0.13-micron standard and triple-oxide logic processes with excellent yield results TSMC is now ready to accept customers' tapeouts using these 0.13-micron triple-oxide logic processes