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Product category: Communications ICs (Wireless)
News Release from: Mimix Broadband | Subject: XP1019-BD
Edited by the Electronicstalk Editorial Team on 01 May 2007
Power amplifier provides variable gain
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Gallium arsenide MMIC three-stage power amplifier features an on-chip temperature compensated output detector.
Mimix Broadband has released a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) three stage power amplifier featuring an on-chip temperature compensated output detector Using 0.15um gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, the power amplifier covers the 17 to 24GHz frequency bands and has a small signal gain of 18dB with +27dBm P1dB compression point