Product category: Communications ICs (Wireless)
News Release from: Mimix Broadband | Subject: XR1002-QB
Edited by the Electronicstalk Editorial Team on 13 November 2006
Receiver promises minimal distortion
SMT packaged GaAs MMIC receiver combines a three stage LNA followed by a single transistor "Tee" attenuator and an image reject fundamental resistive mixer.
Mimix Broadband has introduced an SMT packaged gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) receiver composed of a three stage low noise amplifier (LNA) followed by a single transistor "Tee" attenuator and an image reject fundamental resistive mixer The image reject mixer eliminates the need for a bandpass filter after the LNA to remove thermal noise at the image frequency
This article was originally published on Electronicstalk on 5 Apr 2005 at 8.00am (UK)
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Using 0.15um gate length GaAs pseudomorphic HEMT (pHEMT) device model technology, this receiver covers the 18 to 30GHz frequency bands and is well suited to provide minimum distortion for high index modulation schemes.
The XR1002-QB receiver has a 12dB gain control range, a typical noise figure of 3.5dB, 25dB typical image rejection across the band and +4dBm input third order intercept (IIP3).
At high signal levels, the radio AGC system can be used to reduce the receiver gain, improving the IIP3 providing for minimum distortion at modulation schemes as high as 256 QAM.
The XR1002-QB is provided in a low cost, RoHS-compliant, standard QFN package and is well suited for wireless communications applications such as millimetre-wave point-to-point radio, local multipoint distribution services (LMDS), satcom and Vsat applications.
"The integration of gain control makes the XR1002-QB a versatile part for both low noise and high linearity applications".
"By offering this device in a true surface mount package, customers can lower their material and assembly costs and improve their time to market", stated Paul Beasly, Product Manager, Mimix Broadband.
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