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Product category: Memory Devices and Modules
News Release from: Integrated Silicon Solution | Subject: IS61C5128AX and IS61C25616X
Edited by the Electronicstalk Editorial Team on 14 August 2007
Asynchronous SRAMs support legacy
systems
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In addition to 1.8, 2.5 and 3.3V SRAMs, Integrated Silicon Solution now has a wide variety of 5V SRAMs from 256Kbit to 4Mbit.
A new line of 5V, 4Mbit asynchronous SRAMs from Integrated Silicon Solution includes devices organised as 512K x 8 and 256K x 16bit with access times as fast as 10ns and standby current as low as 200nA Fabricated using 6T cell, 0.13micron, CMOS technology, this highly reliable process coupled with innovative circuit design techniques yield high-performance and low power consumption devices