News Release from: InnoLogic Systems
Edited by the Electronicstalk Editorial Team on 14 April 2005
Strained-Si-SiGe devices boost MOSFET performance
A joint research project lead by the University of Newcastle has delivered a 220% performance gain in strained-Si-SiGe N-channel MOSFETs.
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A joint research project lead by the University of Newcastle has delivered a 220% performance gain in strained-Si-SiGe N-channel MOSFETs. Introducing strained-Si-SiGe in MOSFET devices can enhance and extend the manufacturing lifetime of a CMOS technology node, due to higher electron and hole mobility. The devices constructed at Innos' silicon fabrication facility in Southampton were used to investigate the on-state and off-state performance of strained-Si-SiGe N-channel MOSFETs, as a function of SiGe virtual substrate alloy composition.
'While performance gains over Si controls are impressive, theoretical predications for strained-Si-SiGe MOSFETs had not been achieved until now', explains Sales and Marketing Manager at Innos, Dr Alec Reader.
'Significant performance gains in terms of on-state drain current and maximum transconductance of up to 220% have been demonstrated for strained-Si-SiGe devices compared with Si controls'.
'Device performance is found to peak using a virtual substrate composition of Si0.75/Ge0.25'.
Strained-Si surface channel N-MOSFETs were fabricated on relaxed Si1-x/Gex virtual substrates with x in the range 0.1 to 0.3.
A high thermal budget process was used and the electrical device performance investigated as a function of the SiGe virtual substrate alloy composition.
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