Product category: Discrete Power Devices
News Release from: HVVi Semiconductors | Subject: HVV1214-025, HVV1214-100 and HVV1011-30
Edited by the Electronicstalk Editorial Team on 01 May 2008
Novel architecture offers transistor
breakthrough
The world's first high-frequency high-voltage vertical field effect transistors deliver increased bandwidth, voltage and power levels to radar and avionic applications.
HVVi Semiconductors is claiming the first major advance in silicon RF power transistor design in more than 15 years Based on the world's first high-frequency high-voltage vertical field effect transistor (HVVFET), HVVi's new architecture delivers frequency bandwidth, voltage and power levels to radar and avionic applications that far exceed the capabilities of current bipolar and LDMOS technologies
This article was originally published on Electronicstalk on 24 Dec 2007 at 8.00am (UK)
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