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Product category: Discrete Power Devices
News Release from: Hitachi Europe | Subject: HAT2180RP
Edited by the Electronicstalk Editorial Team on 19 December 2002
Two MOSFETs in one cut down convertor
designs
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Hitachi has developed a 30V drain-source breakdown voltage composite power MOSFET which incorporates chips for both sides of a nonisolated DC/DC convertor in a single package.
Hitachi has developed a 30V drain-source breakdown voltage composite power mosfet which incorporates chips for both sides of a nonisolated DC/DC convertor in a single package The HAT2180RP includes two power mosfets, one with a built-in Schottky barrier diode, and offers higher efficiency than previous Hitachi products