Product category: Memory Devices and Modules
News Release from: Fujitsu Microelectronics Europe | Subject: MB85R2001 and MB85R2002 ferroelectric memory ICs
Edited by the Electronicstalk Editorial Team on 20 April 2007
Ferroelectric memory chips
at 2Mbit capacity
Fujitsu Microelectronics has doubled the capacity of its ferroelectric memory (FRAM) ICs to 2Mbit
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Fujitsu Microelectronics has brought out two new 2Mbit ferroelectric memory (FRAM) ICs, thought to be the industry's highest capacity FRAMs now in volume production. The Fujitsu MB85R2001 and MB85R2002 include nonvolatile memory with high- speed data writing, low power consumption, and the ability to provide a high number of write cycles.
They are suitable for automotive navigation systems, multifunction printers, measuring instruments, and other advanced applications that can use nonvolatile memory to store various parameters, record equipment operating conditions, and preserve security information.
The FRAM's high-speed data writing and the high number of available write cycles allow its application in office equipment to store event counts or parameters, and log every event.
FRAMs allow 10 billion read/write cycles, which corresponds to writing 30 times a second continuously for 10 years.
FRAMs also can store data for more than 10 years without a battery.
In applications such as instrumentation, the Fujitsu FRAM write mechanism ensures that data can be written to FRAM at high speed even if the power is interrupted even temporarily, so valuable data will not be lost.
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The configuration of MB85R2001 is 256K words x 8 bits; the configuration of MB85R2002 is 128K words x 16 bits.
Both have read access times of 100ns, and read/write cycle times of 150ns.
They operate from 3 to 3.6V.
'FRAM technology is particularly suitable for applications that require a high number of write cycles and low power consumption, as well as high-speed data writing', says Keith Horn, Chief Operating Officer of Fujitsu Microelectronics America.
'These new FRAMs provide the increased functionality and higher memory capacity required in new automotive, instrumentation, and other advanced designs'.
'The new FRAMs also share the electrical characteristics of the 1Mbit FRAMs from Fujitsu, enabling an easy migration to the higher capacity versions with the added connection of only one address'.
Due to the ongoing demand for larger FRAM memory, Fujitsu decided to double the memory capacity, resulting in the development and production of the MB85R2001 and MB85R2002.
Compared to battery-backed SRAM, the elimination of battery from FRAM simplifies production processes and removes the hassles of battery replacement and maintenance in products using the Fujitsu FRAM.
The new 2Mbit FRAM products have the same electrical characteristics and TSOP-48 package as Fujitsu's 1Mbit FRAM products (MB85R1001, MB85R1002) that are currently in production.
With the additional connection of only one address, a shift to the 2Mbit products has been made possible.
Therefore, on the same printed circuit board and depending on the necessary memory capacity, either the 1Mbit or 2Mbit FRAM can be used.
The new FRAMs are available in 48-pin TSOPs now, and production pricing is available upon request.
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