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Product category: Discrete Power Devices
News Release from: Fairchild Semiconductor | Subject: FGA20N120FTD and FGA15N120FTD
Edited by the Electronicstalk Editorial Team on 19 March 2008
Efficiency gain for IGBTs
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Field stop structure and avalanche-rugged trench gate technology combine to offer optimal tradeoffs between conduction losses and switching losses.
A new series of 1200V field stop trench IGBTs from Fairchild Semiconductor offer increased efficiency for designers of induction heating systems Using both the field stop structure and avalanche-rugged trench gate technology, the FGA20N120FTD and FGA15N120FTD offer optimal tradeoffs between conduction losses and switching losses, which maximise efficiency