Click on the advert above to visit the company web site
Product category: Discrete Power Devices
News Release from: Fairchild Semiconductor | Subject: FDS881XNZ series
Edited by the Electronicstalk Editorial Team on 16 August 2007
MOSFETs survive larger voltage spikes
Request your FREE weekly copy of the Electronicstalk email newsletter. News about Discrete Power Devices and more every issue. Click here for details.
Low-on-resistance N-channel MOSFETs boost system efficiency and offer new levels of ESD prptection.
Fairchild Semiconductor has a new series of high-efficiency N-channel MOSFETs that boast up to 8kV ESD (HBM) voltage protection - 90% higher than existing devices on the market The FDS881XNZ series support the latest architectures for battery pack protection applications such as notebook and cellphones
This article was o