Product category: Discrete Power Devices
News Release from: Fairchild Semiconductor | Subject: FDS6572A and FDS6574A
Edited by the Electronicstalk Editorial Team on 9 July 2002
Lower drive improves MOSFET efficiency
Fairchild Semiconductor has a new range of low-on-resistance N-channel 20V MOSFETs, designed to improve efficiency in DC/DC convertor applications, with low gate voltages down to 1.5V
Fairchild Semiconductor has a new range of low-on-resistance N-channel 20V mosfets, designed to improve efficiency in DC/DC convertor applications, with low gate voltages down to 1.5V. The new FDS6572A and FDS6574A N-channel, 20V mosfets from Fairchild are designed to replace 30V parts in point-of-load (POL) power supplies and other low-voltage power management applications, especially where low gate drive voltage is a requirement.
This article was originally published on Electronicstalk on 9 July 2002 at 8.00am (UK)
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The first 20V parts produced using a new manufacturing process developed by Fairchild, the FDS6572A/6574A feature lower on-resistance in the same or smaller die size as common 30V devices.
Low threshold voltage - 0.6V for the FDS6574A and 0.8V for the FDS6572A - allows low on-resistance to be achieved with very low gate voltage; a necessity for secondary side regulators where the available gate drive voltage can actually be below the output voltage, which in some cases is as low as 1.5V.
These SO-8 packaged devices offer best in class on-resistance performance, with the FDS6574A specified at 9mohm at 1.8V (VGS) and both parts specified at just 6mohm at 4.5V.
Low on-resistance can lead to increased efficiency through to lower conduction losses.
As an additional benefit for designers, the datasheets for these devices specify their SOA (safe operating area) characteristic, not always included in all datasheets.
A well-defined SOA is indicative of the ruggedness of a device and how well it can withstand stressful operating conditions with simultaneous voltage and current.
This capability is essential for mosfets in linear regulators and also in switching topologies where the reverse recovery characteristics of any accompanying diodes create additional stress.
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