Product category: Discrete Power Devices
News Release from: Fairchild Semiconductor | Subject: FDZ202P, FDZ204P, FDZ206P, FDZ208P
Edited by the Electronicstalk Editorial Team on 17 May 2002
P-channel MOSFETs shrink into BGAs
Four new P-channel MOSFET BGAs combine exceptionally small size with low on-resistance to deliver a highly effective solution for load switching in portable, wireless and networking applications
Four new P-channel mosfet BGAs combine exceptionally small physical size with low on-resistance to deliver a highly effective solution for load switching in portable, wireless and networking applications. The new ball grid array packaged devices, with footprint dimensions ranging from 2.0 x 2.0 to 3.5 x 4.0mm, offer designers concerned with optimising space usage a "footprint figure-of-merit" (FFOM) significantly lower than competing devices housed in SC-70, SO-8, TSSOP-8, SSOT-3, SSOT-6, or other common packages (FFOM is defined as RDS(on) x footprint).
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Space usage is further enhanced because these P-channel devices do not require external charge pump circuitry, and are 2.5/4.5V gate-drive specified, enabling them to be driven directly from integrated circuits in battery power applications.
"As a load management solution for battery operated products", said Jingo Sarkis, Director of Marketing for the Communications Market Segment, Fairchild Discrete Power Technologies Group, "these new P-channel mosfet BGAs are a significant advancement over conventionally packaged devices.
Cell phones, PDAs, pagers - applications requiring maximum space utilisation and extended battery life - all benefit from the superior FFOM, low profile, and simple interface that our new P-channel mosfet BGAs provide".
Further reading
MOSFETs keep their cool
Complementary 40V MOSFET uses dual DPAK packaging to increase system reliability, reduce board space and cut overall system cost
Fairchild is the only manufacturer in full volume production of mosfet BGAs in various sizes, offering a full line of single- and dual-packaged, N- and P-channel devices.
The improved silicon and package characteristics allow mosfet BGAs to offer superior thermal performance, while being capable of the same junction-to-ambient thermal resistance as an SO-8 package.
The top-side heatsinking capability of the BGA package also allows for increased current density, without consuming additional board area.
The FDZ202P, FDZ204P, FDZ206P, FDZ208P are available in tape-and-reel packaging.
Samples and production quantities are available now, with lead times of 8 weeks or more for larger orders.
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