Product category: Memory Devices and Modules
News Release from: Cypress Semiconductor | Subject: 72Mbit NoBL synchronous SRAM
Edited by the Electronicstalk Editorial Team on 17 March 2003
Top density claim
for six-transistor SRAM device
Cypress Semiconductor has achieved functional silicon of the world's highest-density SRAM using its six-transistor 90nm RAM9 process technology
Operating at OC-48 speeds and above, the 72Mbit No Bus Latency (NoBL) synchronous SRAM supports next-generation networking applications. "The development of the 72Mbit NoBL synchronous SRAM on a 90nm footprint solidifies our leadership in both the networking SRAM market and technology innovation", said Antonio Alvarez, Senior Vice President for Cypress's Memory Products Division.
This article was originally published on Electronicstalk on 17 March 2003 at 8.00am (UK)
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"Offering the highest-density SRAM in the market today, this product is the first of many to be migrated onto the RAM9 process by the end of the year".
"Communication customers continue to seek higher-density, cost-effective SRAMs for high-speed networking applications", said Betsy Van Hees, Senior Memory Analyst for iSuppli Corporation.
"With Cypress's recent development of the 72Mbit NoBL synchronous SRAM on 90nm process technology, they have proven their ability to be a leader in the SRAM market.
Cypress now offers a leading-edge product that is ahead of their competition".
RAM9 is being implemented in Cypress's Fab 4 in Bloomington, Minnesota.
In addition to the 72Mbit NoBL synchronous SRAM, two other product families are currently in design and will achieve functional silicon by late 2003 and early 2004.
These product families include Cypress's next-generation networking Quad Data Rate (QDR) SRAMs that operate at datarates beyond 300MHz; and low-power More Battery Life (MoBL) SRAMs, which use less power than standard SRAMs.
Samples of the 72Mbit NoBL synchronous SRAMs will be available during the second half of 2003.
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